APTM120A80FT1G
MOSFET 2N-CH 1200V 14A SP1Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Microsemi Corporation APTM120A80FT1G is a 2 N-Channel MOSFET array designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1200V (1.2kV) and a continuous Drain current (Id) of 14A at 25°C. With a maximum power dissipation of 357W, it is suitable for demanding power conversion and control circuits. The APTM120A80FT1G exhibits a low on-resistance of 960mOhm at 12A and 10V (Vgs), contributing to efficient operation. Key parameters include a gate charge (Qg) of 260nC at 10V and an input capacitance (Ciss) of 6696pF at 25V. This MOSFET array is housed in a chassis-mount SP1 package, facilitating heat dissipation. The APTM120A80FT1G finds application in industries such as industrial power supplies, electric vehicle charging, and renewable energy systems. It operates across a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 357W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 14A |
| Input Capacitance (Ciss) (Max) @ Vds | 6696pF @ 25V |
| Rds On (Max) @ Id, Vgs | 960mOhm @ 12A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 260nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 2.5mA |
| Supplier Device Package | SP1 |
Request a Quote
Clients Also Buy
APTM50DHM35G
MOSFET 2N-CH 500V 99A SP6
APTM50TDUM65PG
MOSFET 6N-CH 500V 51A SP6-P
APTSM120AM08CT6AG
SIC 2N-CH 1200V 370A SP6