APTM10TDUM19PG
MOSFET 6N-CH 100V 70A SP6-PManufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation APTM10TDUM19PG is a 6-channel N-channel MOSFET array configurable as a 3-phase bridge. This device offers a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 70A at 25°C. The low on-resistance (Rds On) of 21mOhm at 35A and 10V, coupled with a maximum power dissipation of 208W, makes it suitable for demanding applications. Key parameters include a gate charge (Qg) of 200nC at 10V and input capacitance (Ciss) of 5100pF at 25V. The APTM10TDUM19PG features chassis mount packaging in a SP6-P configuration and operates across a temperature range of -40°C to 150°C. This MOSFET array finds utility in power conversion and motor drive systems across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP6 |
| Mounting Type | Chassis Mount |
| Configuration | 6 N-Channel (3-Phase Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 208W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 70A |
| Input Capacitance (Ciss) (Max) @ Vds | 5100pF @ 25V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 35A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 200nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SP6-P |
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