APTM10DUM05TG
MOSFET 2N-CH 100V 278A SP4Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation's APTM10DUM05TG is a dual N-channel MOSFET array designed for high-power applications. This component features a Drain to Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 278A at 25°C. The low on-resistance, Rds On, is a maximum of 5mOhm at 125A and 10V, contributing to its impressive 780W maximum power dissipation. With a gate charge (Qg) of 700nC and input capacitance (Ciss) of 20000pF, it offers efficient switching characteristics. The device is housed in an SP4 package for chassis mounting, ensuring robust thermal management. Operating across a temperature range of -40°C to 150°C (TJ), the APTM10DUM05TG is suitable for demanding power conversion and motor control systems across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 780W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 278A |
| Input Capacitance (Ciss) (Max) @ Vds | 20000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 125A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 700nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 5mA |
| Supplier Device Package | SP4 |
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