APTM10DHM09T3G
MOSFET 2N-CH 100V 139A SP3Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation POWER MOS V® APTM10DHM09T3G is a 100V, 2-N-channel MOSFET array designed for high-power applications. This chassis-mount device features a continuous drain current of 139A at 25°C and a low on-resistance of 10mOhm at 69.5A, 10V. The APTM10DHM09T3G offers a maximum power dissipation of 390W and a gate charge of 350nC at 10V. Its input capacitance (Ciss) is 9875pF at 25V, and the threshold voltage (Vgs(th)) is 4V at 2.5mA. This component is utilized in industries such as industrial automation, power supply, and electric vehicle applications. It operates within a temperature range of -40°C to 150°C. The device is supplied in Bulk packaging.
Additional Information
Series: POWER MOS V®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) Asymmetrical |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 390W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 139A |
| Input Capacitance (Ciss) (Max) @ Vds | 9875pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 69.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 350nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 2.5mA |
| Supplier Device Package | SP3 |