APTM100H80FT1G
MOSFET 4N-CH 1000V 11A SP1Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Microsemi Corporation APTM100H80FT1G is a 4 N-Channel MOSFET array designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 1000V (1kV) and a continuous drain current (Id) of 11A at 25°C. The array is configured as a full bridge, offering a power dissipation of 208W. With a low on-resistance (Rds On) of 960mOhm at 9A and 10V, and a gate charge (Qg) of 150nC at 10V, it is suitable for demanding power conversion circuits. The input capacitance (Ciss) is 3876pF at 25V. This device utilizes Metal Oxide MOSFET technology and is packaged in an SP1 chassis mount for efficient thermal management. Operating temperature ranges from -40°C to 150°C (TJ). Applications include power generation, industrial motor control, and electric vehicle powertrains.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 208W |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 11A |
| Input Capacitance (Ciss) (Max) @ Vds | 3876pF @ 25V |
| Rds On (Max) @ Id, Vgs | 960mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 150nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | SP1 |