APTM100A23SCTG
MOSFET 2N-CH 1000V 36A SP4Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation APTM100A23SCTG is a 1000V (1kV) 2 N-Channel Silicon Carbide (SiC) MOSFET array, configured as a half-bridge. This chassis-mount component, packaged in SP4, offers a continuous drain current of 36A at 25°C and a maximum power dissipation of 694W. Key electrical parameters include a Drain to Source Voltage (Vdss) of 1000V, a maximum Rds On of 270mOhm at 18A and 10V, and a gate charge (Qg) of 308nC at 10V. Input capacitance (Ciss) is specified at 8700pF at 25V. Operating temperature ranges from -40°C to 150°C (TJ). This device is suitable for applications in high-voltage power conversion, electric vehicles, and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP4 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 694W |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 36A |
| Input Capacitance (Ciss) (Max) @ Vds | 8700pF @ 25V |
| Rds On (Max) @ Id, Vgs | 270mOhm @ 18A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 308nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 5mA |
| Supplier Device Package | SP4 |
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