APTM100A12STG
MOSFET 2N-CH 1000V 68A SP3Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation APTM100A12STG is a 2 N-channel MOSFET array with a Drain-Source Voltage (Vdss) of 1000V (1kV) and a continuous drain current (Id) of 68A at 25°C. This chassis-mount component, packaged in SP3, offers a low Rds On of 120mOhm maximum at 34A and 10V. Key electrical characteristics include a gate charge (Qg) of 616nC maximum at 10V and an input capacitance (Ciss) of 17400pF maximum at 25V. With a maximum power dissipation of 1250W and an operating temperature range of -40°C to 150°C (TJ), this MOSFET array is suitable for demanding applications. It is utilized in power conversion, motor control, and industrial power supply sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1250W |
| Drain to Source Voltage (Vdss) | 1000V (1kV) |
| Current - Continuous Drain (Id) @ 25°C | 68A |
| Input Capacitance (Ciss) (Max) @ Vds | 17400pF @ 25V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 34A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 616nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 10mA |
| Supplier Device Package | SP3 |
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