APTC90H12T2G
MOSFET 4N-CH 900V 30A SP2Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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The Microsemi Corporation APTC90H12T2G is a 900V, 4-N-channel MOSFET array designed for high-power applications. This CoolMOS™ series component, housed in an SP2 package suitable for chassis mounting, offers a continuous drain current of 30A at 25°C. Key electrical specifications include a drain-to-source voltage (Vdss) of 900V and a maximum continuous power dissipation of 250W. The device features a low on-resistance of 120mOhm at 26A and 10V, with a gate charge (Qg) of 270nC at 10V and input capacitance (Ciss) of 6800pF at 100V. Its threshold voltage (Vgs(th)) is a maximum of 3.5V at 3mA. This component is utilized in power supply, motor control, and industrial power conversion systems, operating within a temperature range of -40°C to 150°C.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SP2 |
| Mounting Type | Chassis Mount |
| Configuration | 4 N-Channel (Full Bridge) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 100V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 26A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | SP2 |
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