APTC90DSK12T1G
MOSFET 2N-CH 900V 30A SP1Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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The Microsemi Corporation APTC90DSK12T1G is a 900V, 30A dual N-channel MOSFET array designed for high-efficiency power conversion applications. This CoolMOS™ series component features a low Rds On of 120mOhm at 26A, 10V, and a maximum continuous drain current of 30A at 25°C. With a power dissipation of 250W and a gate charge of 270nC, it is suitable for demanding power supply designs, motor control, and industrial automation. The device is housed in a chassis mount SP1 package, facilitating efficient thermal management. Its high breakdown voltage and robust performance make it a key component in systems requiring reliable high-power switching. The operating temperature range is -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N Channel (Dual Buck Chopper) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 100V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 26A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | SP1 |
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