APTC90DDA12T1G
MOSFET 2N-CH 900V 30A SP1Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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The Microsemi Corporation APTC90DDA12T1G is a 900V, 30A dual N-channel CoolMOS™ MOSFET array designed for high-power applications. This chassis-mount device, packaged in an SP1, offers a low on-resistance of 120mOhm at 26A and 10V, with a maximum continuous drain current of 30A at 25°C. Key parameters include a gate charge of 270nC (max) at 10V and an input capacitance of 6800pF (max) at 100V. The component supports a maximum power dissipation of 250W and operates within a temperature range of -40°C to 150°C. Its 2 N-channel configuration is suitable for dual buck chopper circuits. This MOSFET array finds application in power factor correction, high-voltage power supplies, and industrial motor control systems.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N Channel (Dual Buck Chopper) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 900V |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 100V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 26A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 270nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.5V @ 3mA |
| Supplier Device Package | SP1 |
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