APTC80DDA29T3G
MOSFET 2N-CH 800V 15A SP3Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation APTC80DDA29T3G is an 800V, 15A dual N-channel MOSFET array designed for high-power applications. This component features a continuous drain current (Id) of 15A and a drain-to-source voltage (Vdss) of 800V, with a maximum power dissipation of 156W. The Rds On is specified at 290mOhm at 7.5A and 10V. Gate charge (Qg) is 90nC maximum at 10V, and input capacitance (Ciss) is 2254pF maximum at 25V. The MOSFET array utilizes Metal Oxide technology and a chassis mountable SP3 package. Operating temperatures range from -40°C to 150°C. This device is suitable for use in industrial power factor correction, power supplies, and motor drive applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP3 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 156W |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 15A |
| Input Capacitance (Ciss) (Max) @ Vds | 2254pF @ 25V |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 1mA |
| Supplier Device Package | SP3 |