APTC60DDAM70CT1G
MOSFET 2N-CH 600V 39A SP1Manufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation's APTC60DDAM70CT1G is a 600V, 39A dual N-channel MOSFET array. This CoolMOS™ series component, housed in an SP1 package for chassis mounting, offers a low Rds(on) of 70mOhm at 39A and 10V. Key parameters include a Vdss of 600V, a continuous drain current of 39A at 25°C, and a maximum power dissipation of 250W. Gate charge (Qg) is specified at 259nC maximum at 10V, with input capacitance (Ciss) at 7000pF maximum at 25V. The threshold voltage (Vgs(th)) is a maximum of 3.9V at 2.7mA. This device operates within a temperature range of -40°C to 150°C (TJ). It finds application in power factor correction, motor drives, and switch mode power supplies.
Additional Information
Series: CoolMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SP1 |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250W |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 39A |
| Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 39A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 259nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 2.7mA |
| Supplier Device Package | SP1 |
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