2N7335
MOSFET 4P-CH 100V 0.75A MO-036ABManufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Microsemi Corporation 2N7335 is a 4 P-Channel MOSFET array designed for high-reliability applications. This through-hole component, packaged in a MO-036AB (14-DIP) form factor, offers a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain current (Id) of 750mA at 25°C. The device features a maximum power dissipation of 1.4W and an Rds On of 1.4 Ohms at 500mA and 10V. With a gate threshold voltage (Vgs(th)) of 4V at 250µA, the 2N7335 is suitable for power management and switching functions in various industrial and defense systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 14-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Configuration | 4 P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 750mA |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | MO-036AB |
Request a Quote
Clients Also Buy
APTM50DHM35G
MOSFET 2N-CH 500V 99A SP6
APTM50TDUM65PG
MOSFET 6N-CH 500V 51A SP6-P
APTSM120AM08CT6AG
SIC 2N-CH 1200V 370A SP6