2N7334
MOSFET 4N-CH 100V 1A MO-036ABManufacturer: Microsemi Corporation
Categories: FET, MOSFET Arrays
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Microsemi Corporation 2N7334 is a 4 N-Channel MOSFET array designed for high-reliability applications. This component features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 1A at 25°C. The device offers a maximum power dissipation of 1.4W and an on-resistance (Rds On) of 700mOhm at 600mA and 10V. Gate charge (Qg) is specified as a maximum of 60nC at 10V, with a threshold voltage (Vgs(th)) of 4V at 250µA.
The 2N7334 is housed in a 14-DIP (0.300", 7.62mm) package, identified by the MO-036AB supplier device package, and is suitable for through-hole mounting. Operating temperature ranges from -55°C to 150°C (TJ), making it suitable for demanding environments. This MOSFET array finds application in various high-performance electronic systems, including aerospace, defense, and industrial control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 14-DIP (0.300"", 7.62mm) |
| Mounting Type | Through Hole |
| Configuration | 4 N-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 600mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | MO-036AB |