WE512K16-120G4C
EEPROM Module, 512KX16, 120ns, Parallel, CMOS, CQMA68Manufacturer: Microsemi Corporation
Categories: EEPROMs
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Microsemi Corporation WE512K16-120G4C is a CMOS EEPROM module featuring a 512K x 16 memory organization, providing a total density of 8,388,608 bits. This parallel interface device offers an access time of 120ns and is organized into four banks of 128K x 16. It supports a data retention period of a minimum of 10 years and boasts a write endurance of 10,000 cycles. Operating with a supply voltage range of 4.5V to 5.5V, this module is designed for surface mounting in a CQMA68 package. Its specifications make it suitable for applications in industrial control, telecommunications, and aerospace.
Additional Information
Series: WE512K16RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Time_Max | 120.0000000000000000 |
| Additional_Feature | ORGANIZED AS 4 BANKS OF 128K X 16; DATA RETENTION 10 YEARS MIN; 10K WRITE ENDURANCE CYCLES |
| Data_Retention_Time_Min | 10 |
| Endurance | 10000.000000000000000 |
| JESD_30_Code | S-CQMA-F68 |
| Memory_Density | 8388608.0000000000000000 |
| Memory_IC_Type | EEPROM MODULE |
| Memory_Organization | 512KX16 |
| Memory_Width | 16 |
| Number_of_Functions | 1 |
| Number_of_Terminals | 68 |
| Number_of_Words | 524288.0000000000000000 |
| Number_of_Words_Code | 512k |
| Operating_Mode | Asynchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | CERAMIC, METAL-SEALED COFIRED |
| Package_Shape | Square |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Parallel_Serial | Parallel |
| Programming_Voltage | 5 |
| Supply_Voltage_Max | 5.50000 |
| Supply_Voltage_Min | 4.50000 |
| Supply_Voltage_Nom | 5 |
| Surface_Mount | Yes |
| Terminal_Form | Flat |
| Terminal_Position | QUAD |
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