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WE128K32N-250HQ

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WE128K32N-250HQ

EEPROM Module, 512KX8, 250ns, Parallel, CMOS, CPGA66

Manufacturer: Microsemi Corporation

Categories: EEPROMs

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Microsemi Corporation WE128K32 series EEPROM module, part number WE128K32N-250HQ, offers a 512K x 8 memory organization with a total density of 4194304 bits. This parallel CMOS component features a maximum access time of 250ns and operates asynchronously. The WE128K32N-250HQ is configurable as 128K x 32 and supports automatic write operations. Its robust design includes a ceramic, metal-sealed cofired package in a square grid array (CPGA66) configuration with perpendicular pin terminals on a 2.54mm pitch. Operating over a temperature range of -55°C to +125°C, it requires a supply voltage between 4.5V and 5.5V, with a nominal 5V. This component is suitable for applications in aerospace, defense, and industrial systems demanding high reliability and performance.

Additional Information

Series: WE128K32RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length30.1000
Width30.1000
TechnologyCMOS
Access_Time_Max250.0000000000000000
Additional_FeatureCONFIGURABLE AS 128K X 32; AUTOMATIC WRITE
Alternate_Memory_Width16
JESD_30_CodeS-CPGA-P66
Memory_Density4194304.0000000000000000
Memory_IC_TypeEEPROM MODULE
Memory_Organization512KX8
Memory_Width8
Number_of_Functions1
Number_of_Terminals66
Number_of_Words524288.0000000000000000
Number_of_Words_Code512k
Operating_ModeAsynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodePGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Parallel_SerialParallel
Programming_Voltage5
Seated_Height_Max6.2200
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormPIN/PEG
Terminal_Pitch2.540
Terminal_PositionPerpendicular

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