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WE128K32N-200HSC

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WE128K32N-200HSC

EEPROM Module, 256K16, 200ns, Parallel, CMOS, CPGA66

Manufacturer: Microsemi Corporation

Categories: EEPROMs

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The Microsemi Corporation WE128K32N-200HSC is a parallel CMOS EEPROM module from the WE128K32 series. This component offers a memory density of 4 Megabits, organized as 256K words by 16 bits, or configurable as 128K words by 32 bits. It features a maximum access time of 200 nanoseconds and operates asynchronously. The module supports hardware and software write protection, with data retention exceeding 10 years. Designed for industrial applications, it operates within a temperature range of 0°C to 70°C and requires a supply voltage between 4.5V and 5.5V with a nominal 5V. The WE128K32N-200HSC is housed in a 66-terminal ceramic, metal-sealed cofired ceramic pin grid array (CPGA66) package.

Additional Information

Series: WE128K32RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
Length30.1000
Width30.1000
TechnologyCMOS
Access_Time_Max200.0000000000000000
Additional_FeatureCONFIGURABLE AS 128K X 32; HARDWARE & SOFTWARE WRITE PROTECTION; DATA RETENTION > 10 YEARS
Alternate_Memory_Width8
Data_Retention_Time_Min10
JESD_30_CodeS-CPGA-P66
Memory_Density4194304.0000000000000000
Memory_IC_TypeEEPROM MODULE
Memory_Organization256K16
Memory_Width16
Number_of_Functions1
Number_of_Terminals66
Number_of_Words262144.0000000000000000
Number_of_Words_Code256k
Operating_ModeAsynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialCERAMIC, METAL-SEALED COFIRED
Package_CodePGA
Package_ShapeSquare
Package_StyleGRID ARRAY
Parallel_SerialParallel
Programming_Voltage5
Seated_Height_Max6.2200
Supply_Voltage_Max5.50000
Supply_Voltage_Min4.50000
Supply_Voltage_Nom5
Surface_MountNo
Terminal_FormPIN/PEG
Terminal_Pitch2.540
Terminal_PositionPerpendicular

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