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WV3HG64M72EER806PD4SG

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WV3HG64M72EER806PD4SG

DDR DRAM Module, 64MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WV3HG64M72EER806PD4SG is a 64M x 72 DDR DRAM Module utilizing CMOS technology. This module operates in synchronous mode with a single bank page burst access mode and supports auto/self refresh functionalities. It features a memory density of 4.375 Gb and a word count of 67,108,864. The operating temperature range is from 0.0°C to 85.0°C, with a supply voltage nominal of 1.8V (min 1.70V, max 1.90V). This component is commonly found in applications within the telecommunications and defense industries.

Additional Information

Series: WV3HG64M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XZMA-N200
Memory_Density4831838208.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionZIG-ZAG

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