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WV3HG64M64EEU403D6GG

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WV3HG64M64EEU403D6GG

DDR DRAM Module, 64MX64, 0.6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WV3HG64M64EEU403D6GG is a DDR DRAM module from the WV3HG64M64 series, offering a memory organization of 64M x 64 bits. This component features a maximum access time of 0.6ns and operates in synchronous mode with a single bank page burst access mode. Key functionalities include auto and self-refresh capabilities. The module is built on CMOS technology and has a total memory density of 4294967296 bits. It operates within a temperature range of 0°C to 85°C and requires a supply voltage between 1.70V and 1.90V. This DRAM module is suitable for applications in the telecommunications and industrial sectors.

Additional Information

Series: WV3HG64M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max0.6000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density4294967296.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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