WV3HG64M32EEU403D4MG
DDR DRAM Module, 64MX32, 0.6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WV3HG64M32EEU403D4MG is a 2Gb DDR DRAM module with a 64M x 32 memory organization. This module operates in synchronous mode, supporting a four-bank page burst access mode and featuring auto/self-refresh capabilities. It offers a maximum access time of 0.6 ns and is built using CMOS technology. The operating temperature range is from 0°C to 85°C, with a nominal supply voltage of 1.8V, ranging from 1.7V to 1.9V. This component is suitable for applications in telecommunications, networking, and computing systems requiring high-speed data buffering and memory expansion. Its form factor is a 200-terminal DIMM package.
Additional Information
Series: WV3HG64M32RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.6000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N200 |
| Memory_Density | 2147483648.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 64MX32 |
| Memory_Width | 32 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
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