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WV3HG32M64EEU403D6M

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WV3HG32M64EEU403D6M

DDR DRAM Module, 32MX64, 0.6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WV3HG32M64EEU403D6M is a DDR DRAM Module from the WV3HG32M64 series. This component features a memory organization of 32MX64, delivering a memory density of 2Gigabit. With a maximum access time of 0.6ns, it operates in synchronous mode with CMOS technology. Key features include auto/self refresh capabilities and a single bank page burst access mode. The module is designed for a supply voltage range of 1.70V to 1.90V, with a nominal operating voltage of 1.8V. It operates within an ambient temperature range of 0°C to 85°C. This 240-terminal component, packaged as a DIMM, is utilized in applications requiring high-speed data buffering and storage, commonly found in computing, networking, and industrial automation systems.

Additional Information

Series: WV3HG32M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeSINGLE BANK PAGE BURST
Access_Time_Max0.6000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density2147483648.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization32MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words33554432.0000000000000000
Number_of_Words_Code32M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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