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WV3HG264M72EEU806PD4ISG

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WV3HG264M72EEU806PD4ISG

DDR DRAM Module, 128MX72, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WV3HG264M72EEU806PD4ISG is a 128M x 72 DDR DRAM module employing CMOS technology. This component features a dual bank page burst access mode and supports auto/self refresh functionality. Operating within a temperature range of -40°C to 85°C, it requires a supply voltage between 1.70V and 1.90V, with a nominal value of 1.8V. The module is packaged as a rectangular DIMM with a microelectronic assembly style and utilizes zig-zag terminal positions. Its synchronous operating mode and 72-bit memory width make it suitable for applications in data storage, telecommunications infrastructure, and high-performance computing.

Additional Information

Series: WV3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XZMA-N200
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionZIG-ZAG

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