WV3HG264M72EEU534D4IMG
DDR DRAM Module, 128MX72, 0.5ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WV3HG264M72EEU534D4IMG is a DDR DRAM Module offering 128MX72 memory organization. This CMOS component features a maximum access time of 0.5ns and supports synchronous operation with dual bank page burst access mode. Additional functionalities include auto and self-refresh capabilities, ensuring data integrity. The module comprises 200 terminals and is designed for applications requiring high-speed data access and storage. Its robust design makes it suitable for use in telecommunications, computing, and industrial systems. The memory density is approximately 9.66 Gbits.
Additional Information
Series: WV3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.5000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N200 |
| Memory_Density | 9663676416.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
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