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WV3HG264M72EEU403D7IMG

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WV3HG264M72EEU403D7IMG

DDR DRAM Module, 128MX72, 0.6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WV3HG264M72EEU403D7IMG is a DDR DRAM module from the WV3HG264M72 series. This component features a 128M x 72 memory organization, providing a nominal density of 9.66 Gbit. It operates with a synchronous, dual bank page burst access mode and boasts a maximum access time of 0.6 ns. The module supports auto and self-refresh functionalities and operates within an industrial temperature range of -40°C to 85°C. Power requirements are met with a supply voltage ranging from 1.7V to 1.9V, with a nominal value of 1.8V. This CMOS technology component is housed in a 244-terminal rectangular DIMM package. Its high-speed operation and reliability make it suitable for applications in aerospace, defense, and high-performance computing.

Additional Information

Series: WV3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.6000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N244
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals244
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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