WV3HG264M72EER403PD4ISG
DDR DRAM Module, 128MX72, 0.6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WV3HG264M72EER403PD4ISG is a DDR DRAM Module from the WV3HG264M72 series. This component features a memory organization of 128MX72, providing a total memory density of 9,663,676,416 bits. It operates synchronously with a maximum access time of 0.6ns and a nominal supply voltage of 1.8V, ranging from 1.7V to 1.9V. The WV3HG264M72EER403PD4ISG supports dual bank page burst access mode and incorporates auto/self refresh capabilities. Operating within an industrial temperature range of -40°C to 85°C, this CMOS technology module is suitable for demanding applications in aerospace, defense, and high-performance computing. The component is housed in a 200-terminal DIMM package.
Additional Information
Series: WV3HG264M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.6000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N200 |
| Memory_Density | 9663676416.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
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