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WV3HG264M64EEU806D6SG

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WV3HG264M64EEU806D6SG

DDR DRAM Module, 128MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WV3HG264M64EEU806D6SG is a DDR DRAM Module component with a memory organization of 128MX64. This CMOS module operates synchronously and supports dual bank page burst access modes. Key features include auto and self-refresh capabilities, essential for maintaining data integrity in memory subsystems. The module provides a memory density of 8,589,934,592 bits and a total of 134,217,728 words. It is housed in a 240-terminal DIMM package with a rectangular shape and is designed for surface mount applications. Operating within a temperature range of 0.0°C to 85.0°C, this component utilizes a nominal supply voltage of 1.8V, with a maximum of 1.900V. The WV3HG264M64 series module is suitable for applications in networking, telecommunications, and industrial automation.

Additional Information

Series: WV3HG264M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density8589934592.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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