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WV3HG264M64EEU806D6GG

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WV3HG264M64EEU806D6GG

DDR DRAM Module, 128MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WV3HG264M64EEU806D6GG is a DDR DRAM Module from the WV3HG264M64 series. This component features a memory organization of 128MX64, providing a total memory density of 8589934592 bits. It operates synchronously with a dual bank page burst access mode and supports auto/self-refresh functionality. The module requires a supply voltage ranging from 1.700V to 1.900V, with a nominal value of 1.8V. Operating within a temperature range of 0.0°C to 85.0°C, this CMOS technology component is housed in a rectangular DIMM package. Applications for this type of memory module can be found in various computing and industrial systems requiring high-speed data storage and retrieval.

Additional Information

Series: WV3HG264M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density8589934592.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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