WV3HG264M64EEU665D6GG
DDR DRAM Module, 128MX64, 0.45ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WV3HG264M64 DDR DRAM Module, part number WV3HG264M64EEU665D6GG, offers an 8Gb memory density with a 128M x 64 organization. This CMOS component operates synchronously with a maximum access time of 0.45ns. Key features include Dual Bank Page Burst access mode and Auto/Self Refresh capabilities. The module is designed for a supply voltage range of 1.70V to 1.90V, with a nominal voltage of 1.8V, and operates within a temperature range of 0°C to 85°C. It utilizes a 240-terminal DIMM package. This component is suitable for applications in aerospace, defense, and high-performance computing.
Additional Information
Series: WV3HG264M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.4500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N240 |
| Memory_Density | 8589934592.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 240 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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