WV3HG264M64EEU403D6MG
DDR DRAM Module, 128MX64, 0.6ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WV3HG264M64EEU403D6MG is a DDR DRAM module from the WV3HG264M64 series. This component offers a memory organization of 128Mx64, delivering a total memory density of 8589934592 bits. It operates synchronously with a maximum access time of 0.6ns and supports dual bank page burst access mode. Key features include auto and self-refresh capabilities, essential for maintaining data integrity in volatile memory. The module utilizes CMOS technology and operates within a temperature range of 0°C to 85°C, with a nominal supply voltage of 1.8V, accommodating a range of 1.7V to 1.9V. Its 240-terminal package is designed for microelectronic assembly, suitable for applications in networking, industrial automation, and high-performance computing where reliable and fast memory is critical.
Additional Information
Series: WV3HG264M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 0.6000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N240 |
| Memory_Density | 8589934592.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 128MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 240 |
| Number_of_Words | 134217728.0000000000000000 |
| Number_of_Words_Code | 128M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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