WV3HG2128M72EEU806AD4-SG
DDR DRAM Module, 256MX72, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation WV3HG2128M72EEU806AD4-SG is a 19.3 Gb DDR DRAM module with a memory organization of 256M x 72 bits. This CMOS component operates synchronously with a dual bank page burst access mode. Key features include auto and self-refresh capabilities, supporting a supply voltage range of 1.70V to 1.90V with a nominal value of 1.8V. The module operates within a temperature range of 0°C to 85°C. Its package style is a microelectronic assembly, specifically a DIMM, with 200 terminals. This component is utilized in applications such as networking equipment, industrial control systems, and high-performance computing.
Additional Information
Series: WV3HG2128M72RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N200 |
| Memory_Density | 19327352832.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 256MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 268435456.0000000000000000 |
| Number_of_Words_Code | 256M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
Request a Quote
Clients Also Buy
WV3HG2128M72EEU403AD4-SG
DDR DRAM Module, 256MX72, 0.6ns, CMOS
WV3HG2128M72EEU403D6IMG
DDR DRAM Module, 256MX72, 0.6ns, CMOS
WV3HG2128M72EEU403D6ISG
DDR DRAM Module, 256MX72, 0.6ns, CMOS