WV3HG2128M64EEU806D6ISG
DDR DRAM Module, 256MX64, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation WV3HG2128M64EEU806D6ISG is a 256M x 64 DDR DRAM module utilizing CMOS technology. This memory component offers a density of 17,179,869,184 bits and operates synchronously with a DUAL BANK PAGE BURST access mode. Key features include AUTO/SELF REFRESH capabilities and a package style of MICROELECTRONIC ASSEMBLY, specifically a 240-terminal DIMM. The operating temperature range is from -40°C to +85°C, with a nominal supply voltage of 1.8V, ranging from 1.700V to 1.900V. This component is suitable for applications in the aerospace, defense, and industrial sectors where high-reliability memory is critical.
Additional Information
Series: WV3HG2128M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N240 |
| Memory_Density | 17179869184.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 256MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 240 |
| Number_of_Words | 268435456.0000000000000000 |
| Number_of_Words_Code | 256M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 1.90000 |
| Supply_Voltage_Min | 1.70000 |
| Supply_Voltage_Nom | 1.8 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
WV3HG2128M64EEU403D4MG
DDR DRAM Module, 256MX64, 0.6ns, CMOS
WV3HG2128M64EEU403D4SG
DDR DRAM Module, 256MX64, 0.6ns, CMOS
WV3HG2128M64EEU403D6IMG
DDR DRAM Module, 256MX64, 0.6ns, CMOS