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WV3HG2128M64EEU806D4SG

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WV3HG2128M64EEU806D4SG

DDR DRAM Module, 256MX64, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WV3HG2128M64EEU806D4SG is a DDR DRAM Module with a memory organization of 256Mx64. This CMOS component operates synchronously with a dual bank page burst access mode. It supports auto and self-refresh functionalities and features a memory density of 17.18 Gb. The module operates within a temperature range of 0°C to 85°C and requires a supply voltage between 1.7V and 1.9V, with a nominal value of 1.8V. Designed for demanding applications, this electronic component is commonly found in networking equipment, industrial automation, and consumer electronics. The WV3HG2128M64 series component is packaged in a 200-terminal DIMM.

Additional Information

Series: WV3HG2128M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XZMA-N200
Memory_Density17179869184.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionZIG-ZAG

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