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WV3HG2128M64EEU403D4SG

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WV3HG2128M64EEU403D4SG

DDR DRAM Module, 256MX64, 0.6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WV3HG2128M64EEU403D4SG is a DDR DRAM module from the WV3HG2128M64 series. This component offers a memory organization of 256M x 64, providing a total memory density of 17.18 Gb. It features a maximum access time of 0.6 ns and operates with CMOS technology. The module supports synchronous operation and includes auto/self-refresh capabilities. Its dual bank page burst access mode enhances data throughput. The operating voltage range is from 1.70V to 1.90V, with a nominal supply voltage of 1.8V. This microelectronic assembly is designed for applications requiring high-speed memory solutions, often found in industrial, networking, and computing systems. The operating temperature range is 0°C to 85°C.

Additional Information

Series: WV3HG2128M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.6000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XZMA-N200
Memory_Density17179869184.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization256MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionZIG-ZAG

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