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WV3HG128M72AER403AD6MF

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WV3HG128M72AER403AD6MF

DDR DRAM Module, 128MX72, 0.6ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WV3HG128M72AER403AD6MF is a DDR DRAM module from the WV3HG128M72 series. This component features a memory organization of 128M x 72, providing a total memory density of 9,663,676,416 bits. It operates with a maximum access time of 0.6 nanoseconds and employs CMOS technology. The module supports a four-bank page burst access mode and includes auto/self-refresh capabilities. Operating within a temperature range of 0°C to 85°C, it requires a supply voltage between 1.70V and 1.90V, with a nominal value of 1.8V. This synchronous memory device is suitable for applications in the aerospace, defense, and industrial sectors. The package type is a 240-terminal DIMM.

Additional Information

Series: WV3HG128M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.6000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N240
Memory_Density9663676416.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization128MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals240
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max1.90000
Supply_Voltage_Min1.70000
Supply_Voltage_Nom1.8
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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