WV3EG64M64ETSU403D4SG
DDR DRAM Module, 64MX64, 0.65ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WV3EG64M64 DDR DRAM Module, part number WV3EG64M64ETSU403D4SG, offers a 64MX64 memory organization with a 4Gb density. This CMOS component operates in synchronous mode with a 0.65ns access time and supports a four-bank page burst access mode. Key features include auto and self-refresh capabilities, with a nominal supply voltage of 2.6V (2.5V-2.7V range). The module is housed in a 200-terminal DIMM package and operates within a temperature range of 0°C to 70°C. This component is suitable for applications in telecommunications, networking, and industrial automation.
Additional Information
Series: WV3EG64M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.6500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XZMA-N200 |
| Memory_Density | 4294967296.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 64MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 67108864.0000000000000000 |
| Number_of_Words_Code | 64M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.50000 |
| Supply_Voltage_Nom | 2.6 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | ZIG-ZAG |
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