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WV3EG64M64ETSU335D4IMG

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WV3EG64M64ETSU335D4IMG

DDR DRAM Module, 64MX64, 0.7ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WV3EG64M64ETSU335D4IMG is a DDR DRAM Module from the WV3EG64M64 series. This component features a 64MX64 memory organization, providing a total memory density of 4294967296 bits. It operates in synchronous mode with a maximum access time of 0.7ns and utilizes CMOS technology. The module supports auto and self-refresh functionalities, with self-refresh capability enabled. It operates within a temperature range of -40°C to 85°C and requires a supply voltage between 2.30V and 2.70V, with a nominal value of 2.5V. The device is designed for a four-bank page burst access mode. Applications for this type of memory component are found in enterprise computing, industrial automation, and telecommunications infrastructure.

Additional Information

Series: WV3EG64M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XZMA-N200
Memory_Density4294967296.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization64MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words67108864.0000000000000000
Number_of_Words_Code64M
Operating_ModeSynchronous
Operating_Temperature_Max85.0
Operating_Temperature_Min-40.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionZIG-ZAG

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