WV3EG6434S335BD4SG
DDR DRAM Module, 32MX64, 0.7ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WV3EG6434S335BD4SG is a 2Gb DDR DRAM Module from the WV3EG6434 series. This component features a memory organization of 32M x 64, providing a 64-bit data width for high-throughput applications. It operates in synchronous mode with a maximum access time of 0.7ns, supporting a four-bank page burst access mode. Key features include auto/self refresh capabilities and a nominal supply voltage of 2.5V, with a range of 2.3V to 2.7V. The module is constructed using CMOS technology and is housed in a 200-terminal DIMM package. This component is suitable for applications requiring high-speed memory solutions, including telecommunications, computing, and industrial systems.
Additional Information
Series: WV3EG6434RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.7000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N200 |
| Memory_Density | 2147483648.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 32MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 200 |
| Number_of_Words | 33554432.0000000000000000 |
| Number_of_Words_Code | 32M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
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