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WV3EG216M64STSU335D4SG

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WV3EG216M64STSU335D4SG

DDR DRAM Module, 32MX64, 0.7ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation WV3EG216M64STSU335D4SG is a DDR DRAM module from the WV3EG216M64 series. This component features a memory organization of 32Mx64 with a total density of 2 Gigabits. It operates in synchronous mode with a maximum access time of 0.7ns and utilizes a CMOS technology. Key operational features include dual bank page burst access, auto/self refresh capabilities, and a nominal supply voltage of 2.5V, with a range of 2.3V to 2.7V. The module is designed for a temperature range of 0°C to 70°C. This component is suitable for applications in computing, networking, and industrial systems requiring high-speed memory solutions.

Additional Information

Series: WV3EG216M64RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max0.7000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N200
Memory_Density2147483648.0000000000000000
Memory_IC_TypeDDR DRAM MODULE
Memory_Organization32MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals200
Number_of_Words33554432.0000000000000000
Number_of_Words_Code32M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max2.70000
Supply_Voltage_Min2.30000
Supply_Voltage_Nom2.5
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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