WV3DG72256V7AD2MG
Synchronous DRAM Module, 256MX72, 5.4ns, CMOSManufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
The Microsemi Corporation WV3DG72256V7AD2MG is a Synchronous DRAM Module from the WV3DG72256 series. This 256M x 72 organization offers a memory density of 19.3 Gbit and operates with a maximum access time of 5.4 ns. Featuring CMOS technology, it supports Dual Bank Page Burst access mode and AUTO/SELF REFRESH functionality. The module has a 168-terminal configuration and operates within a temperature range of 0°C to 70°C with a supply voltage of 3.0V to 3.6V. This component is utilized in demanding applications across industries such as telecommunications, industrial control, and defense.
Additional Information
Series: WV3DG72256RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | DUAL BANK PAGE BURST |
| Access_Time_Max | 5.4000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-XDMA-N168 |
| Memory_Density | 19327352832.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 256MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 168 |
| Number_of_Words | 268435456.0000000000000000 |
| Number_of_Words_Code | 256M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | UNSPECIFIED |
| Package_Code | DIMM |
| Package_Shape | Rectangular |
| Package_Style | MICROELECTRONIC ASSEMBLY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | No |
| Terminal_Form | NO LEAD |
| Terminal_Position | Dual |
Request a Quote
Clients Also Buy
WV3DG72256V10AD2I-MG
Synchronous DRAM Module, 256MX72, 5.4ns, CMOS
WV3DG72256V10AD2I-SG
Synchronous DRAM Module, 256MX72, 5.4ns, CMOS
WV3DG72256V10AD2MG
Synchronous DRAM Module, 256MX72, 5.4ns, CMOS