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WV3DG72256V10AD2SG

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WV3DG72256V10AD2SG

Synchronous DRAM Module, 256MX72, 5.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

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The Microsemi Corporation WV3DG72256V10AD2SG is a Synchronous DRAM Module from the WV3DG72256 series. This component features a 256M x 72 memory organization, offering a total density of 19.3 Gb. With a maximum access time of 5.4 ns and CMOS technology, it supports dual bank page burst access modes. The module incorporates auto/self refresh capabilities and operates within a supply voltage range of 3.0V to 3.6V, with a nominal of 3.3V. Designed for demanding applications, this 168-terminal component is suitable for use in sectors such as telecommunications, industrial automation, and high-performance computing. The operating temperature range is from 0°C to 70°C.

Additional Information

Series: WV3DG72256RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max5.4000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density19327352832.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization256MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words268435456.0000000000000000
Number_of_Words_Code256M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

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