Home

Products

Integrated Circuits (ICs)

Memory

DRAMs

WV3DG64127V7D2

Banner
productimage

WV3DG64127V7D2

Synchronous DRAM Module, 128MX64, 5.4ns, CMOS

Manufacturer: Microsemi Corporation

Categories: DRAMs

Quality Control: Learn More

Microsemi Corporation's WV3DG64127V7D2 is a synchronous DRAM module offering an 128M x 64 memory organization. This component operates with a maximum access time of 5.4ns, utilizing CMOS technology. Key features include Dual Bank Page Burst access mode and support for Auto/Self Refresh functionalities. The module is designed for a supply voltage range of 3.0V to 3.6V, with a nominal value of 3.3V, and operates within a temperature range of 0°C to 70°C. Its 168-terminal configuration is presented in a DIMM package. This component is suitable for applications in networking, telecommunications, and industrial automation where high-speed memory is critical. The WV3DG64127 series component adheres to JESD-30 Code R-XDMA-N168.

Additional Information

Series: WV3DG64127RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeDUAL BANK PAGE BURST
Access_Time_Max5.4000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-XDMA-N168
Memory_Density8589934592.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM MODULE
Memory_Organization128MX64
Memory_Width64
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals168
Number_of_Words134217728.0000000000000000
Number_of_Words_Code128M
Operating_ModeSynchronous
Operating_Temperature_Max70.0
Operating_Temperature_Min0.0
Package_Body_MaterialUNSPECIFIED
Package_CodeDIMM
Package_ShapeRectangular
Package_StyleMICROELECTRONIC ASSEMBLY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountNo
Terminal_FormNO LEAD
Terminal_PositionDual

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
WV3DG64127V10D2

Synchronous DRAM Module, 128MX64, 6ns, CMOS

product image
WV3DG64127V75D2

Synchronous DRAM Module, 128MX64, 5.4ns, CMOS

product image
W3EG72125S335JD3SG

DDR DRAM Module, 128MX72, 0.7ns, CMOS