WEDPND8M72S-266BI
DDR DRAM Module, 8MX72, 0.75ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WEDPND8M72S-266BI is a DDR DRAM module with an 8MX72 organization, offering a memory density of 603,979,776 bits. This module features a maximum access time of 0.75ns and operates in synchronous mode with a four-bank page burst access mode. It supports auto and self-refresh functionalities, and operates within a temperature range of -40°C to 85°C. The device utilizes CMOS technology and is housed in a PBGA219 package with ball terminals on the bottom. This component is suitable for applications in the telecommunications and consumer electronics industries. The supply voltage ranges from 2.30V to 2.70V, with a nominal voltage of 2.5V.
Additional Information
Series: WEDPND8M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.7500000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 603979776.0000000000000000 |
| Memory_IC_Type | DDR DRAM MODULE |
| Memory_Organization | 8MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 8388608.0000000000000000 |
| Number_of_Words_Code | 8M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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