WEDPND16M72S-250BM
DDR1 DRAM, 16MX72, 0.8ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation WEDPND16M72S-250BM is a DDR1 DRAM component with a memory organization of 16M x 72. It features a maximum access time of 0.8 ns and operates using CMOS technology. This component supports a four-bank page burst access mode and includes an auto refresh feature. The operating temperature range is from -55°C to +125°C, with a nominal supply voltage of 2.5V and a maximum of 2.70V. The WEDPND16M72S-250BM is housed in a 219-ball PBGA (Plastic Ball Grid Array) package. This device is suitable for applications in industrial, networking, and defense sectors requiring high-speed memory solutions.
Additional Information
Series: WEDPND16M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.8000000000000000 |
| Additional_Feature | AUTO REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 1207959552.0000000000000000 |
| Memory_IC_Type | DDR1 DRAM |
| Memory_Organization | 16MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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