WEDPND16M72S-250BC
DDR1 DRAM, 16MX72, 0.8ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation WEDPND16M72S-250BC is a DDR1 DRAM component featuring a 16M x 72 memory organization, providing a total density of 1.2 Gb. This device operates synchronously with a maximum access time of 0.8 ns and utilizes CMOS technology. The WEDPND16M72 series component supports a four-bank page burst access mode and incorporates auto/self-refresh functionalities. It is housed in a PBGA219 (R-PBGA-B219) package, suitable for surface-mount applications. Operating within a temperature range of 0°C to 70°C, this DRAM is designed for applications requiring high-speed data transfer and reliable memory solutions, often found in networking, industrial, and computing systems. The supply voltage ranges from 2.30V to 2.70V, with a nominal voltage of 2.5V.
Additional Information
Series: WEDPND16M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 0.8000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 1207959552.0000000000000000 |
| Memory_IC_Type | DDR1 DRAM |
| Memory_Organization | 16MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 16777216.0000000000000000 |
| Number_of_Words_Code | 16m |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 70.0 |
| Operating_Temperature_Min | 0.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 2.70000 |
| Supply_Voltage_Min | 2.30000 |
| Supply_Voltage_Nom | 2.5 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
Request a Quote
Clients Also Buy
WEDPND16M72S-200BC
DDR1 DRAM, 16MX72, 0.8ns, CMOS, PBGA219
WEDPND16M72S-200BI
DDR1 DRAM, 16MX72, 0.8ns, CMOS, PBGA219
WEDPND16M72S-200BM
DDR1 DRAM, 16MX72, 0.8ns, CMOS, PBGA219