WEDPN8M72VR-66I
Synchronous DRAM Module, 8MX72, 7.5ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
Quality Control: Learn More
Microsemi Corporation WEDPN8M72VR-66I is a 64Mbit x 72 Synchronous DRAM Module featuring a 7.5ns access time. This CMOS component, organized as 8M x 72, operates in synchronous mode with a four-bank page burst access. It supports auto and self-refresh functionalities, operating within a temperature range of -40°C to 85°C. The module is housed in a 219-ball PBGA package (JESD-30 Code R-PBGA-B219) with a supply voltage range of 3.0V to 3.6V. Applications for this high-performance memory solution span industries such as telecommunications, industrial automation, and defense systems.
Additional Information
Series: WEDPN8M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 7.5000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 603979776.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 8MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 8388608.0000000000000000 |
| Number_of_Words_Code | 8M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 85.0 |
| Operating_Temperature_Min | -40.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
Request a Quote
Clients Also Buy
WEDPN8M72V-100B2C
Synchronous DRAM, 8MX72, 7ns, CMOS, PBGA219
WEDPN8M72V-100B2I
Synchronous DRAM, 8MX72, 7ns, CMOS, PBGA219
WEDPN8M72V-100B2M
Synchronous DRAM, 8MX72, 7ns, CMOS, PBGA219