WEDPN8M72V-133B2M
Synchronous DRAM, 8MX72, 5.5ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WEDPN8M72V-133B2M is a high-performance Synchronous DRAM component from the WEDPN8M72 series. This device features an 8Mx72 memory organization, providing a total memory density of 603,979,776 bits. It operates with a maximum access time of 5.5ns and utilizes CMOS technology for efficient operation. The component supports a four-bank page burst access mode and includes auto/self-refresh capabilities. Packaged in a 219-ball PBGA (R-PBGA-B219) with a 1.27mm terminal pitch, it is designed for surface mounting. The operating temperature range is from -55°C to +125°C, with a nominal supply voltage of 3.3V, ranging from 3.0V to 3.6V. This DRAM is suitable for demanding applications in sectors such as telecommunications, aerospace, and industrial control systems.
Additional Information
Series: WEDPN8M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 5.5000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 603979776.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 8MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 8388608.0000000000000000 |
| Number_of_Words_Code | 8M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Pitch | 1.270 |
| Terminal_Position | Bottom |
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