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WEDPN8M72V-100B2M

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WEDPN8M72V-100B2M

Synchronous DRAM, 8MX72, 7ns, CMOS, PBGA219

Manufacturer: Microsemi Corporation

Categories: DRAMs

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Microsemi Corporation's WEDPN8M72V-100B2M is a high-performance Synchronous DRAM component from the WEDPN8M72 series. This memory IC features an 8Mx72 organization, offering a substantial memory density of 603,979,776 bits. Designed with CMOS technology, it provides a maximum access time of 7.0 ns and operates synchronously. The component supports a four-bank page burst access mode and includes auto/self-refresh capabilities. Supplied in a PBGA219 package, it is suitable for surface-mount applications. This device operates within a wide temperature range of -55°C to 125°C and utilizes a supply voltage between 3.0V and 3.6V, with a nominal voltage of 3.3V. The WEDPN8M72V-100B2M finds application in demanding sectors such as telecommunications, industrial control, and high-reliability computing systems where robust memory solutions are critical.

Additional Information

Series: WEDPN8M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:
Technical Details:
TechnologyCMOS
Access_ModeFOUR BANK PAGE BURST
Access_Time_Max7.0000000000000000
Additional_FeatureAUTO/SELF REFRESH
JESD_30_CodeR-PBGA-B219
Memory_Density603979776.0000000000000000
Memory_IC_TypeSYNCHRONOUS DRAM
Memory_Organization8MX72
Memory_Width72
Number_of_Functions1
Number_of_Ports1
Number_of_Terminals219
Number_of_Words8388608.0000000000000000
Number_of_Words_Code8M
Operating_ModeSynchronous
Operating_Temperature_Max125.0
Operating_Temperature_Min-55.0
Package_Body_MaterialPLASTIC/EPOXY
Package_CodeBGA
Package_ShapeRectangular
Package_StyleGRID ARRAY
Self_RefreshYes
Supply_Voltage_Max3.60000
Supply_Voltage_Min3.00000
Supply_Voltage_Nom3.3
Surface_MountYes
Terminal_FormBall
Terminal_Pitch1.270
Terminal_PositionBottom

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