WEDPN8M64VR-66BM
Synchronous DRAM Module, 8MX64, 7.5ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WEDPN8M64VR-66BM is a high-performance Synchronous DRAM Module featuring an 8Mx64 organization. This CMOS component operates with a maximum access time of 7.5 ns and supports a four-bank page burst access mode. It includes auto refresh functionality and is housed in a 219-ball PBGA (R-PBGA-B219) package, suitable for surface mounting. The module operates across an industrial temperature range of -55°C to 125°C with a supply voltage range of 3.0V to 3.6V, nominal 3.3V. Its memory density is 536,870,912 bits. This component is commonly utilized in aerospace, defense, and industrial computing applications requiring robust memory solutions.
Additional Information
Series: WEDPN8M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 7.5000000000000000 |
| Additional_Feature | AUTO REFRESH |
| Alternate_Memory_Width | 32 |
| JESD_30_Code | R-PBGA-B219 |
| Memory_Density | 536870912.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 8MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 8388608.0000000000000000 |
| Number_of_Words_Code | 8M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Rectangular |
| Package_Style | GRID ARRAY |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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