WEDPN8M64V-100B2M
Synchronous DRAM, 8MX64, 7ns, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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The Microsemi Corporation WEDPN8M64V-100B2M is a high-performance Synchronous DRAM featuring an 8Mx64 memory organization. This component operates with a maximum access time of 7.0 ns and utilizes CMOS technology. The WEDPN8M64 series part offers a generous memory density of 536,870,912 bits, organized into 8M words. It supports a FOUR BANK PAGE BURST access mode and incorporates AUTO/SELF REFRESH functionality. Operating across a wide temperature range of -55°C to 125°C, this device is suitable for demanding applications within the industrial, defense, and aerospace sectors. The component is housed in a 219-ball PBGA (S-PBGA-B219) package, emphasizing its surface-mount capability. It operates with a nominal supply voltage of 3.3V, with a maximum of 3.60V and a minimum of 3.00V.
Additional Information
Series: WEDPN8M64RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Access_Time_Max | 7.0000000000000000 |
| Additional_Feature | AUTO/SELF REFRESH |
| Alternate_Memory_Width | 32 |
| JESD_30_Code | S-PBGA-B219 |
| Memory_Density | 536870912.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM |
| Memory_Organization | 8MX64 |
| Memory_Width | 64 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 8388608.0000000000000000 |
| Number_of_Words_Code | 8M |
| Operating_Mode | Synchronous |
| Operating_Temperature_Max | 125.0 |
| Operating_Temperature_Min | -55.0 |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Square |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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