WEDPN4M72V-ESB2
Synchronous DRAM Module, 4MX72, CMOS, PBGA219Manufacturer: Microsemi Corporation
Categories: DRAMs
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Microsemi Corporation's WEDPN4M72-ESB2 is a 4Mx72 Synchronous DRAM Module utilizing CMOS technology. This module, part of the WEDPN4M72 series, features a 4-bank page burst access mode for enhanced performance. It supports auto and self-refresh functionalities, simplifying memory management. The component is housed in a 219-ball PBGA (Plastic Ball Grid Array) package, identified by JESD-30 code S-PBGA-B219, with a plastic/epoxy body and bottom-mounted ball terminals. Operating within a supply voltage range of 3.00V to 3.60V, with a nominal voltage of 3.3V, this surface-mount device is suitable for applications requiring high-speed data buffering and storage. Its memory organization provides a total density of 301989888 bits. This component finds application in data processing, telecommunications infrastructure, and high-performance computing systems.
Additional Information
Series: WEDPN4M72RoHS Status: Manufacturer Lead Time: Product Status: DiscontinuedPackaging: Datasheet:Download Free CAD Model:
Technical Details:
| Technology | CMOS |
| Access_Mode | FOUR BANK PAGE BURST |
| Additional_Feature | AUTO/SELF REFRESH |
| JESD_30_Code | S-PBGA-B219 |
| Memory_Density | 301989888.0000000000000000 |
| Memory_IC_Type | SYNCHRONOUS DRAM MODULE |
| Memory_Organization | 4MX72 |
| Memory_Width | 72 |
| Number_of_Functions | 1 |
| Number_of_Ports | 1 |
| Number_of_Terminals | 219 |
| Number_of_Words | 4194304.0000000000000000 |
| Number_of_Words_Code | 4M |
| Operating_Mode | Synchronous |
| Package_Body_Material | PLASTIC/EPOXY |
| Package_Code | BGA |
| Package_Shape | Square |
| Package_Style | GRID ARRAY |
| Self_Refresh | Yes |
| Supply_Voltage_Max | 3.60000 |
| Supply_Voltage_Min | 3.00000 |
| Supply_Voltage_Nom | 3.3 |
| Surface_Mount | Yes |
| Terminal_Form | Ball |
| Terminal_Position | Bottom |
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